Semiconducting phase of hafnium dioxide under high pressure: a theoretical study by quasi-particle GW calculations

نویسندگان

چکیده

The phase stability of the hafnium dioxide compounds HfO2, a novel material with wide range application due to its versatility and biocompatibility, is predicted be achievable by using evolutionary technique, based on first-principles calculations. Herein, candidate structure HfO2 revealed adopt tetragonal under high-pressure P4/nmm space group. This evidently confirms structures, since decomposition into component elements pressure does not occur until at least 200 GPa. Moreover, phonon calculations can confirm that dynamically stable. mainly attributed semiconducting property within Perdew–Burke–Ernzerhof, modified Becke-Johnson exchange potential in combination generalized gradient approximations, quasi-particle GW approximation, respectively. Our calculation manifests likely metal above GPa, arising particularly from approximation. remarkable results this work provide more understanding for designing metal-oxide-based materials.

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ژورنال

عنوان ژورنال: Materials research express

سال: 2021

ISSN: ['2053-1591']

DOI: https://doi.org/10.1088/2053-1591/ac2a98